Azine- and Azole-Functionalized Oligo´ and Polythiophene Semiconductors for Organic Thin-Film Transistors

Functionalized polythiophene thin-film transistors for low-cost gas sensor arrays

Organic Thin Film Transistors with Polyvinylpyrrolidone / Nickel Oxide Sol-Gel Derived Nanocomposite Insulator

Polyvinylpyrrolidone  /  Nickel  oxide  (PVP/NiO)  dielectrics  were fabricated  with  sol-gel  method  using  0.2  g  of  PVP  at  different working  temperatures  of  80,  150  and  200  ºC.  Structural  properties and surface morphology of the hybrid films were investigated by X- Ray  diffraction  (XRD)  and  Scanning  Electron Microscope  (SEM) respectively. Energy dispersive X-ray spec...

Thiophene-diazine molecular semiconductors: synthesis, structural, electrochemical, optical, and electronic structural properties; implementation in organic field-effect transistors.

The synthesis, structural, electrochemical, optical, and electronic structure properties of a new azine-thiophene semiconductor family are reported and compared to those of analogous oligothiophenes. The new molecules are: 5,5'-bis(6-(thien-2-yl)pyrimid-4-yl)-2,2'-dithiophene (1), 5,5'-bis(6-(5-hexylthien-2-yl)pyrimid-4-yl)-2,2'-dithiophene (3), and 5,5'-bis(6-(thien-2-yl)pyridazin-3-yl))-2,2'-...

Solution-deposited organic-inorganic hybrid multilayer gate dielectrics. Design, synthesis, microstructures, and electrical properties with thin-film transistors.

We report here on the rational synthesis, processing, and dielectric properties of novel layer-by-layer organic/inorganic hybrid multilayer dielectric films enabled by polarizable π-electron phosphonic acid building blocks and ultrathin ZrO(2) layers. These new zirconia-based self-assembled nanodielectric (Zr-SAND) films (5-12 nm thick) are readily fabricated via solution processes under ambien...

Process Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays

Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...